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Effect of device geometries on HCI and PBTI of gate first High-K metal gate NMOS transistors by
  • Jain, Sharad Kumar
Material type: Text Book
Publication details: Gandhinagar: Indian Institute of Technology, 2014
Availability: Items available for loan: IIT Gandhinagar (1)Call number: 621.3815284 JAI. Items available for reference: IIT Gandhinagar: Not for loan (1)Call number: 621.3815284 JAI.

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2.
Fundamentals of bias temperature instability in MOS transistors: characterization methods, process and materials impact, DC and AC modeling by
  • Mahapatra, Souvik, (Ed.)
Material type: Text Book
Publication details: New York: Springer, 2016
Availability: Items available for loan: IIT Gandhinagar (1)Call number: 621.3815 MAH.

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