Fundamentals of bias temperature instability in MOS transistors: characterization methods, process and materials impact, DC and AC modeling

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Material type: Book

BookPublication details: New York: Springer, 2016Description: 269 p,: ill.,; 25 cmISBN:

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Holdings
Item type	Current library	Call number	Status	Date due	Barcode
Books	IIT Gandhinagar	621.3815 MAH (Browse shelf(Opens below))	Available		023388

Includes bibliographical references and index

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