Modeling and characterization of RF and microwave power FETs

By:

Aaen, Peter

Contributor(s):

Series: Cambridge RF and Microwave Engineering SeriesPublication details: Cambridge: Cambridge University Press, 2011.Description: xv 362p. pbk. 24 cmISBN:

9780521336178

Subject(s):

DDC classification:

621.3815284 AAE

Summary: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. https://www.cambridge.org/in/universitypress/subjects/engineering/rf-and-microwave-engineering/modeling-and-characterization-rf-and-microwave-power-fets?format=PB&isbn=9780521336178

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Holdings
Item type	Current library	Collection	Call number	Copy number	Status	Barcode
Books	IIT Gandhinagar	General	621.3815284 AAE (Browse shelf(Opens below))	1	Available	035381

Includes Index

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

https://www.cambridge.org/in/universitypress/subjects/engineering/rf-and-microwave-engineering/modeling-and-characterization-rf-and-microwave-power-fets?format=PB&isbn=9780521336178

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