Modeling and characterization of RF and microwave power FETs (Record no. 62247)

MARC details
000 -LEADER
fixed length control field 01987 a2200289 4500
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250408202529.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
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020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780521336178
040 ## - CATALOGING SOURCE
Transcribing agency IIT Gandhinagar
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815284 AAE
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Aaen, Peter
245 ## - TITLE STATEMENT
Title Modeling and characterization of RF and microwave power FETs
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. Cambridge:
Name of publisher, distributor, etc. Cambridge University Press,
Date of publication, distribution, etc. 2011.
300 ## - PHYSICAL DESCRIPTION
Extent xv 362p.
Other physical details pbk.
Dimensions 24 cm.
490 ## - SERIES STATEMENT
Series statement Cambridge RF and Microwave Engineering Series
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes Index
520 ## - SUMMARY, ETC.
Summary, etc. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.<br/><br/>https://www.cambridge.org/in/universitypress/subjects/engineering/rf-and-microwave-engineering/modeling-and-characterization-rf-and-microwave-power-fets?format=PB&isbn=9780521336178
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element High-Power FETs
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Model Validation
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Microwave Engineering
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Optoelectronic Devices
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanotechnology
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name Plá, Jaime A.
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name Wood, John
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Books
Source of classification or shelving scheme Dewey Decimal Classification
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Collection code Home library Current library Date acquired Source of acquisition Cost, normal purchase price Total Checkouts Full call number Barcode Date last seen Copy number Cost, replacement price Price effective from Koha item type
    Dewey Decimal Classification     General IIT Gandhinagar IIT Gandhinagar 02/04/2025 34 8370.00   621.3815284 AAE 035381 02/04/2025 1 8370.00 02/04/2025 Books


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