Fundamentals of bias temperature instability in MOS transistors: characterization methods, process and materials impact, DC and AC modeling
Mahapatra, Souvik, (Ed.),
Fundamentals of bias temperature instability in MOS transistors: characterization methods, process and materials impact, DC and AC modeling - New York: Springer, 2016 - 269 p,: ill.,; 25 cm.
Includes bibliographical references and index
9788132225072
Applied physics
Mathematical models
Physical mechanism
Bias temperature instability
Reaction diffusion model
Recovery for SiON
621.3815 / MAH
Fundamentals of bias temperature instability in MOS transistors: characterization methods, process and materials impact, DC and AC modeling - New York: Springer, 2016 - 269 p,: ill.,; 25 cm.
Includes bibliographical references and index
9788132225072
Applied physics
Mathematical models
Physical mechanism
Bias temperature instability
Reaction diffusion model
Recovery for SiON
621.3815 / MAH
