000 | 00767nam a22002297a 4500 | ||
---|---|---|---|
008 | 181206b c2018 xxu||||| |||| 00| 0 eng d | ||
082 |
_a537.6226 _bDHA |
||
100 | _aDhawan, Rishi | ||
245 | _aFabrication near U V transparent conductor by bandgap engineering: effect of Mg addition on the undoped and Al-doped Zno thin films | ||
260 |
_aGandhinagar : _bIndian Institute of Technology, _c2018. |
||
300 |
_ax, 41 p. : _bill. ; _c29 cm. |
||
504 | _aIncluding bibliography details | ||
650 | _a16210075 | ||
650 | _aM.Tech | ||
650 | _aMaterial Science | ||
650 | _aRF Magnetron Sputtering | ||
650 | _aOptoelectronic Characterization | ||
650 | _aPL Spectroscopy | ||
650 | _aOptical Transparency | ||
700 | _aPanda, Emila | ||
942 | _cT | ||
999 |
_c49315 _d49315 |