000 | 00659nam a2200205 454500 | ||
---|---|---|---|
008 | 160319b1999 xxu||||| |||| 00| 0 eng d | ||
020 | _a9780195170153 | ||
082 | _a621.3815284 TSI | ||
100 | _aTsividis, Yannis, | ||
245 | _aOperation and modeling of the MOS transistor | ||
250 | _a2nd ed. | ||
260 |
_aNew Delhi: _bOxford University Press, _c1999. |
||
300 |
_axx, 620 p. : _bill; _c24 cm. |
||
500 | _aIncludes bibliographical references and index. | ||
650 | _aApplied physics | ||
650 | _aMetal oxide semiconductor field-effect transistors | ||
650 | _aMathematical models | ||
650 | _aMetal oxide semiconductors | ||
942 |
_2ddc _cTD |
||
999 |
_c33386 _d33386 |