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Handbook for III-V high electron mobility transistor technologies

By: Contributor(s): Publication details: Boca Raton: CRC Press, 2020Description: xii,430p. ill.; pbk.: 25cmISBN:
  • 9780367729240
Subject(s): DDC classification:
  • 621.3815284 NIR
Summary: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). https://www.taylorfrancis.com/books/edit/10.1201/9780429460043/handbook-iii-high-electron-mobility-transistor-technologies-nirmal-ajayan
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Item type Current library Collection Call number Copy number Status Barcode
Books IIT Gandhinagar General 621.3815284 NIR (Browse shelf(Opens below)) 1 Available 033612

Includes References

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).

https://www.taylorfrancis.com/books/edit/10.1201/9780429460043/handbook-iii-high-electron-mobility-transistor-technologies-nirmal-ajayan

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