Handbook for III-V high electron mobility transistor technologies
Publication details: Boca Raton: CRC Press, 2020Description: xii,430p. ill.; pbk.: 25cmISBN:- 9780367729240
- 621.3815284 NIR
| Item type | Current library | Collection | Call number | Copy number | Status | Barcode | |
|---|---|---|---|---|---|---|---|
Books
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IIT Gandhinagar | General | 621.3815284 NIR (Browse shelf(Opens below)) | 1 | Available | 033612 |
Includes References
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).
https://www.taylorfrancis.com/books/edit/10.1201/9780429460043/handbook-iii-high-electron-mobility-transistor-technologies-nirmal-ajayan
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