Design and optimization of high voltage, high power LDMOS transistors for RF applications

By: Contributor(s): Material type: TextPublication details: Gandhinagar: Indian Institute of Technology Gandhinagar, 2024.Description: xxvi, 145p.; hbk; 30cmSubject(s): DDC classification:
  • 621.38411 PAT
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Theses (Ph.D) IIT Gandhinagar Reference 621.38411 PAT (Browse shelf(Opens below)) Not for Issue T01166

Includes references.

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https://repository.iitgn.ac.in/handle/123456789/10453

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