Wide band gap semiconductor nanowires 2: heterostructures and optoelectronic devices

By:

Consonni, Vincent (Ed.)

Contributor(s):

Feuillet, Guy [Co-editor]

Material type:

TextPublication details: Wiley, 2024.ISBN:

9781118984277

Subject(s):

DDC classification:

621.38152 CON

Online resources:

Click here to access e-book

Summary: This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.

List(s) this item appears in: IEEE-Wiley Semiconductor Ebooks

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Item type	Current library	Call number	Materials specified	URL	Status
E- Books	IIT Gandhinagar	621.38152 CON (Browse shelf(Opens below))	IEEE-Wiley Semiconductor Ebooks	Link to resource	Available

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.

Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.

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