TY  - GEN
AU  - Nirmal, D. [Ed.]
AU  - Ajayan, J.
TI  - Handbook for III-V high electron mobility transistor technologies
SN  - 9780367729240
U1  - 621.3815284 NIR 
PY  - 2020///
CY  - Boca Raton
PB  - CRC Press
KW  - Technology
KW  - Epitaxial Deposition Techniques
KW  - Electron
KW  - Mobility Transistors
KW  - Polarization Effects
N1  - Includes References
N2  - This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).

https://www.taylorfrancis.com/books/edit/10.1201/9780429460043/handbook-iii-high-electron-mobility-transistor-technologies-nirmal-ajayan
ER  -