Srivastava, Ayush

Stability analysis of monolayer TMD FET, Si FinFET, and Si NSFET based 6T SRAM for N5 and beyond - Gandhinagar: Indian Institute of Technology Gandhinagar, 2023. - xii, 57p.; hbk; 30cm.

Includes references.


21250007
M.Tech
Electrical Engineering
Transition Metal Dichalcogenides (TMD)
Field-Effect Transistors (FET)
6T-SRAM
Read-Static-Noise- Margin (RSNM)

621.3 SRI