Effect of device geometries on HCI and PBTI of gate first High-K metal gate NMOS transistors
- Gandhinagar: Indian Institute of Technology, 2014.
- ix, 62p.: Col. ill.; 30 cm + with one CD ROM.
Guide of this theses is Prof. Nihar Ranjan Mohapatra
12210021 M.Tech Electrical Engineering Hot Carrier Injection Bias Temperature Instability Hydrogen Diffusion Temperature Instability