Fundamentals of nanotransistors

By:

Lundstrom, Mark

Series: Lessons from nanoscience: a lecture note seriesPublication details: World Scientific Publishing, 2017. Singapore:Description: xlv, 342p. : ill.; pb. ; 23cmISBN:

9789814571739

Subject(s):

DDC classification:

621.3815284 LUN

Summary: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, bottom-up approach that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits

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Item type	Current library	Collection	Call number	Copy number	Status	Date due	Barcode
Books	IIT Gandhinagar	General	621.3815284 LUN (Browse shelf(Opens below))	1	Available		030651

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Previous	621.38152 STR Solid state electronic devices	621.38152 STR Solid state electronic devices	621.381528 COL FinFETs and other multi-gate transistors	621.3815284 LUN Fundamentals of nanotransistors	621.3815284 NEU Field effect devices, Vol. 4	621.3815284 NIR Handbook for III-V high electron mobility transistor technologies	621.3815284 TSU Carrier transport in nanoscale MOS transistors	Next

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The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, bottom-up approach that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits

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