Ionizing radiation effects in MOS oxides by Timothy R. Oldham
Material type: BookSeries: ; Current publication frequency: .Publication details: Singapore : World Scientific, 1999.Edition: Description: xiv, 171p.: ill; 23 cmISBN:- 9789810233266
- 621.38152 OLD
Item type | Current library | Collection | Call number | Status | Date due | Barcode |
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Books | IIT Gandhinagar | General | 621.38152 OLD (Browse shelf(Opens below)) | Available | 016692 |
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621.3815284015 MIU Physics and modeling of MOSFETS: surface-potential model HiSIM | 621.3815284 GAL MOSFET modeling for circuit analysis and design | 537.622 LIM Modern semiconductor quantum physics | 621.38152 OLD Ionizing radiation effects in MOS oxides | 621.3815 SAX Invention of integrated circuits: untold important facts | 621.3815 TAN Electromigration in ULSI Interconnections | 006.4 JAI Introduction to biometrics |
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