Compact electrostatics and transport model for high mobility iii-v channel gate-all-around MOS transistors
Ganeriwala, Mohit D.
Compact electrostatics and transport model for high mobility iii-v channel gate-all-around MOS transistors - Gandhinagar : Indian Institute of Technology Gandhinagar, 2020 - xxii,123p. : ill. ; 30 cm.
Including bibliography details
13210026
Ph.D
Electrical Engineering
Semiconductor Materials
MOS Transistors
Circuit Simulators
Cross-sectional Geometries
Compact electrostatics and transport model for high mobility iii-v channel gate-all-around MOS transistors - Gandhinagar : Indian Institute of Technology Gandhinagar, 2020 - xxii,123p. : ill. ; 30 cm.
Including bibliography details
13210026
Ph.D
Electrical Engineering
Semiconductor Materials
MOS Transistors
Circuit Simulators
Cross-sectional Geometries