Effect of device geometries on HCI and PBTI of gate first High-K metal gate NMOS transistors
Jain, Sharad Kumar
Effect of device geometries on HCI and PBTI of gate first High-K metal gate NMOS transistors - Gandhinagar: Indian Institute of Technology, 2014. - ix, 62p.: Col. ill.; 30 cm + with one CD ROM.
Guide of this theses is Prof. Nihar Ranjan Mohapatra
12210021
M.Tech
Electrical Engineering
Hot Carrier Injection
Bias Temperature Instability
Hydrogen Diffusion
Temperature Instability
621.3815284 JAI
Effect of device geometries on HCI and PBTI of gate first High-K metal gate NMOS transistors - Gandhinagar: Indian Institute of Technology, 2014. - ix, 62p.: Col. ill.; 30 cm + with one CD ROM.
Guide of this theses is Prof. Nihar Ranjan Mohapatra
12210021
M.Tech
Electrical Engineering
Hot Carrier Injection
Bias Temperature Instability
Hydrogen Diffusion
Temperature Instability
621.3815284 JAI
